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A Diamond:H/WO3 Metal–Oxide–Semiconductor Field-Effect Transistor

Author(s)
Yin, Zongyou; Tordjman, Moshe; Vardi, Alon; Kalish, Rafi; del Alamo, Jesus A
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Abstract
A p-type Diamond:H/WO 3 metal-oxide-semiconductor field-effect transistor (MOSFET) based on surface transfer doping is demonstrated. Using a low-temperature ALD-grown HfO 2 as gate insulator, the Diamond:H/WO 3 MOSFETs show excellent output characteristics, gate-controllable 2-D hole gas, and low gate leakage current. Long-channel FETs exhibit improved subthreshold behavior but reduced transconductance with respect to short-channel devices. An observed WO 3 -thickness-dependent threshold voltage is consistent with enhanced surface transfer doping as the WO 3 layer is thinned down. Low-temperature measurements suggest a significantly lower mobility than expected in this material system. This illustrates the challenge of maintaining high TMO quality during device fabrication.
Date issued
2018-02
URI
https://hdl.handle.net/1721.1/126179
Department
Massachusetts Institute of Technology. Microsystems Technology Laboratories; Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Journal
IEEE Electron Device Letters
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Yin, Zongyou et al. "A Diamond:H/WO3 Metal–Oxide–Semiconductor Field-Effect Transistor." IEEE Electron Device Letters 39, 4 (February 2018): 540 - 543 © 2018 IEEE
Version: Author's final manuscript
ISSN
0741-3106
1558-0563

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