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dc.contributor.authorYin, Zongyou
dc.contributor.authorTordjman, Moshe
dc.contributor.authorVardi, Alon
dc.contributor.authorKalish, Rafi
dc.contributor.authordel Alamo, Jesus A
dc.date.accessioned2020-07-14T16:10:56Z
dc.date.available2020-07-14T16:10:56Z
dc.date.issued2018-02
dc.identifier.issn0741-3106
dc.identifier.issn1558-0563
dc.identifier.urihttps://hdl.handle.net/1721.1/126179
dc.description.abstractA p-type Diamond:H/WO 3 metal-oxide-semiconductor field-effect transistor (MOSFET) based on surface transfer doping is demonstrated. Using a low-temperature ALD-grown HfO 2 as gate insulator, the Diamond:H/WO 3 MOSFETs show excellent output characteristics, gate-controllable 2-D hole gas, and low gate leakage current. Long-channel FETs exhibit improved subthreshold behavior but reduced transconductance with respect to short-channel devices. An observed WO 3 -thickness-dependent threshold voltage is consistent with enhanced surface transfer doping as the WO 3 layer is thinned down. Low-temperature measurements suggest a significantly lower mobility than expected in this material system. This illustrates the challenge of maintaining high TMO quality during device fabrication.en_US
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/led.2018.2808463en_US
dc.rightsCreative Commons Attribution-Noncommercial-Share Alikeen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/4.0/en_US
dc.sourceProf. del Alamo via Phoebe Ayersen_US
dc.titleA Diamond:H/WO3 Metal–Oxide–Semiconductor Field-Effect Transistoren_US
dc.typeArticleen_US
dc.identifier.citationYin, Zongyou et al. "A Diamond:H/WO3 Metal–Oxide–Semiconductor Field-Effect Transistor." IEEE Electron Device Letters 39, 4 (February 2018): 540 - 543 © 2018 IEEEen_US
dc.contributor.departmentMassachusetts Institute of Technology. Microsystems Technology Laboratoriesen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.relation.journalIEEE Electron Device Lettersen_US
dc.eprint.versionAuthor's final manuscripten_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.date.submission2020-07-09T19:43:15Z
mit.journal.volume39en_US
mit.journal.issue4en_US
mit.licenseOPEN_ACCESS_POLICY
mit.metadata.statusComplete


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