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Time-Dependent Dielectric Breakdown in High-Voltage GaN MIS-HEMTs: The Role of Temperature

Author(s)
Warnock, Shireen M.; Lemus, Allison; Joh, Jungwoo; Krishnan, Srikanth; Pendharkar, Sameer; del Alamo, Jesus A; ... Show more Show less
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Abstract
We have investigated time-dependent dielectric breakdown in high-voltage AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors, with a focus specifically on the role of temperature under positive gate stress conditions. We aim toward understanding the temperature dependence of progressive breakdown (PBD) as well as hard breakdown. We find that the temperature dependence of time-to-first breakdown, hard breakdown, and the gate current evolution during PBD all share similar, shallow activation energies that suggest a common underlying mechanism. However, the gate current noise during PBD seems to be independent of temperature and is likely due to a tunneling process. Understanding of temperature-dependent breakdown is essential to developing accurate device lifetime estimates.
Date issued
2017-07
URI
https://hdl.handle.net/1721.1/126183
Department
Massachusetts Institute of Technology. Microsystems Technology Laboratories; Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Lincoln Laboratory
Journal
IEEE Transactions on Electron Devices
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Warnock, Shireen et al. "Time-Dependent Dielectric Breakdown in High-Voltage GaN MIS-HEMTs: The Role of Temperature." IEEE Transactions on Electron Devices 64, 8 (August 2018): 3132 - 3138 © 2017 IEEE
Version: Author's final manuscript
ISSN
0018-9383
1557-9646

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