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dc.contributor.authorWarnock, Shireen M.
dc.contributor.authorLemus, Allison
dc.contributor.authorJoh, Jungwoo
dc.contributor.authorKrishnan, Srikanth
dc.contributor.authorPendharkar, Sameer
dc.contributor.authordel Alamo, Jesus A
dc.date.accessioned2020-07-14T18:46:04Z
dc.date.available2020-07-14T18:46:04Z
dc.date.issued2017-07
dc.identifier.issn0018-9383
dc.identifier.issn1557-9646
dc.identifier.urihttps://hdl.handle.net/1721.1/126183
dc.description.abstractWe have investigated time-dependent dielectric breakdown in high-voltage AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors, with a focus specifically on the role of temperature under positive gate stress conditions. We aim toward understanding the temperature dependence of progressive breakdown (PBD) as well as hard breakdown. We find that the temperature dependence of time-to-first breakdown, hard breakdown, and the gate current evolution during PBD all share similar, shallow activation energies that suggest a common underlying mechanism. However, the gate current noise during PBD seems to be independent of temperature and is likely due to a tunneling process. Understanding of temperature-dependent breakdown is essential to developing accurate device lifetime estimates.en_US
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1109/ted.2017.2717924en_US
dc.rightsCreative Commons Attribution-Noncommercial-Share Alikeen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/4.0/en_US
dc.sourceProf. del Alamo via Phoebe Ayersen_US
dc.titleTime-Dependent Dielectric Breakdown in High-Voltage GaN MIS-HEMTs: The Role of Temperatureen_US
dc.typeArticleen_US
dc.identifier.citationWarnock, Shireen et al. "Time-Dependent Dielectric Breakdown in High-Voltage GaN MIS-HEMTs: The Role of Temperature." IEEE Transactions on Electron Devices 64, 8 (August 2018): 3132 - 3138 © 2017 IEEEen_US
dc.contributor.departmentMassachusetts Institute of Technology. Microsystems Technology Laboratoriesen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.departmentLincoln Laboratoryen_US
dc.relation.journalIEEE Transactions on Electron Devicesen_US
dc.eprint.versionAuthor's final manuscripten_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.date.submission2020-07-09T20:03:58Z
mit.journal.volume64en_US
mit.journal.issue8en_US
mit.licenseOPEN_ACCESS_POLICY


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