dc.contributor.author | Warnock, Shireen M. | |
dc.contributor.author | Lemus, Allison | |
dc.contributor.author | Joh, Jungwoo | |
dc.contributor.author | Krishnan, Srikanth | |
dc.contributor.author | Pendharkar, Sameer | |
dc.contributor.author | del Alamo, Jesus A | |
dc.date.accessioned | 2020-07-14T18:46:04Z | |
dc.date.available | 2020-07-14T18:46:04Z | |
dc.date.issued | 2017-07 | |
dc.identifier.issn | 0018-9383 | |
dc.identifier.issn | 1557-9646 | |
dc.identifier.uri | https://hdl.handle.net/1721.1/126183 | |
dc.description.abstract | We have investigated time-dependent dielectric breakdown in high-voltage AlGaN/GaN metal-insulator-semiconductor high-electron mobility transistors, with a focus specifically on the role of temperature under positive gate stress conditions. We aim toward understanding the temperature dependence of progressive breakdown (PBD) as well as hard breakdown. We find that the temperature dependence of time-to-first breakdown, hard breakdown, and the gate current evolution during PBD all share similar, shallow activation energies that suggest a common underlying mechanism. However, the gate current noise during PBD seems to be independent of temperature and is likely due to a tunneling process. Understanding of temperature-dependent breakdown is essential to developing accurate device lifetime estimates. | en_US |
dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1109/ted.2017.2717924 | en_US |
dc.rights | Creative Commons Attribution-Noncommercial-Share Alike | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-sa/4.0/ | en_US |
dc.source | Prof. del Alamo via Phoebe Ayers | en_US |
dc.title | Time-Dependent Dielectric Breakdown in High-Voltage GaN MIS-HEMTs: The Role of Temperature | en_US |
dc.type | Article | en_US |
dc.identifier.citation | Warnock, Shireen et al. "Time-Dependent Dielectric Breakdown in High-Voltage GaN MIS-HEMTs: The Role of Temperature." IEEE Transactions on Electron Devices 64, 8 (August 2018): 3132 - 3138 © 2017 IEEE | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Microsystems Technology Laboratories | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science | en_US |
dc.contributor.department | Lincoln Laboratory | en_US |
dc.relation.journal | IEEE Transactions on Electron Devices | en_US |
dc.eprint.version | Author's final manuscript | en_US |
dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
eprint.status | http://purl.org/eprint/status/PeerReviewed | en_US |
dspace.date.submission | 2020-07-09T20:03:58Z | |
mit.journal.volume | 64 | en_US |
mit.journal.issue | 8 | en_US |
mit.license | OPEN_ACCESS_POLICY | |
mit.metadata.status | Complete | |