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Alcohol-Based Digital Etch for III–V Vertical Nanowires With Sub-10 nm Diameter

Author(s)
Lu, Wenjie; Zhao, Xin; Choi, Dongsung; El Kazzi, Salim; del Alamo, Jesus A
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Abstract
This letter introduces a novel alcohol-based digital etch technique for III-V FinFET and nanowire MOSFET fabrication. The new technique addresses the limitations of the conventional water-based approach in enabling structures with sub-10-nm 3-D features. Using the same oxidation step, the new technique shows an etch rate of 1 nm/cycle, identical to the conventional approach. Sub-10 nm fins and nanowires with a high mechanical yield have been achieved. InGaAs nanowires with a diameter of 5 nm and an aspect ratio greater than 40 have been demonstrated. The new technique has also been successfully applied to InGaSb-based heterostructures, the first demonstration of digital etch in this material system. Vertical InGaAs nanowire gate-all-around MOSFETs with a subthreshold swing of 70 mV/decade at V DS = 50 mV have been obtained at a nanowire diameter of 40 nm, demonstrating the good interfacial quality that the new technique provides.
Date issued
2017-04
URI
https://hdl.handle.net/1721.1/126190
Department
Massachusetts Institute of Technology. Microsystems Technology Laboratories; Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Journal
IEEE Electron Device Letters
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Lu, Wenjie et al. "Alcohol-Based Digital Etch for III–V Vertical Nanowires With Sub-10 nm Diameter." IEEE Electron Device Letters 38, 5 (May 2017): 548 - 551 © 2017 IEEE
Version: Author's final manuscript
ISSN
0741-3106
1558-0563

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