Global optimization for accurate determination of EBSD pattern centers
Author(s)Pang, Edward L.; Larsen, Peter Mahler; Schuh, Christopher A
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Accurate pattern center determination has long been a challenge for the electron backscatter diffraction (EBSD) community and is becoming critically accuracy-limiting for more recent advanced EBSD techniques. Here, we study the parameter landscape over which a pattern center must be fitted in quantitative detail and reveal that it is both “sloppy” and noisy, which limits the accuracy to which pattern centers can be determined. To locate the global optimum in this challenging landscape, we propose a combination of two approaches: the use of a global search algorithm and averaging the results from multiple patterns. We demonstrate the ability to accurately determine pattern centers of simulated patterns, inclusive of effects of binning and noise on the error of the fitted pattern center. We also demonstrate the ability of this method to accurately detect changes in pattern center in an experimental dataset with noisy and highly binned patterns. Source code for our pattern center fitting algorithm is available online. ©2019 Elsevier B.V.
DepartmentMassachusetts Institute of Technology. Department of Materials Science and Engineering
Pang, Edward L. et al., "Global optimization for accurate determination of EBSD pattern centers." Ultramicroscopy 209 (February 2020): 112876 doi. 10.1016/j.ultramic.2019.112876 ©2019 Authors