Sensitization of silicon by singlet exciton fission in tetracene
Author(s)Wu, Tony C; Einzinger, Markus; Kompalla, Julia; Smith, Hannah L.; Perkinson, Collin Fisher; Nienhaus, Lea; Wieghold, Sarah; Congreve, Daniel Norbert; Thompson, Nicholas J.; Kahn, Antoine; Bawendi, Moungi G; Baldo, Marc A; ... Show more Show less
MetadataShow full item record
Singlet fission can split a high energy singlet exciton and generate two lower energy triplet excitons. This process has shown near 200 percent triplet exciton yield. Sensitizing solar cells with singlet fission material, it can potentially increase the power conversion efficiency limit from 29 percent to 35 percent. Singlet fission in the tetracene is known to be efficient, and the energy of the triplet excitons are energetically matched to the silicon bandgap. In this work, we designed an optical measurement with an external magnetic field to determine the efficiencies of triplet exciton transfer from tetracene to silicon. Using this method, we have found that a passivation layer of 8 angstroms of hafnium oxynitride on silicon allows efficient triplet exciton transfer around 133 percent.
DepartmentMassachusetts Institute of Technology. Research Laboratory of Electronics; Massachusetts Institute of Technology. Department of Mechanical Engineering; Massachusetts Institute of Technology. Department of Chemistry
Proceedings of SPIE
Society of Photo-Optical Instrumentation Engineers (SPIE)
Wu, Tony C. et al. "Sensitization of silicon by singlet exciton fission in tetracene", Physical Chemistry of Semiconductor Materials and Interfaces XIX, Proceedings of SPIE, 11464, Society of Photo-Optical Instrumentation Engineers, 2020, 1146416. © 2020 SPIE.
Final published version