dc.contributor.author | Wu, Tony C | |
dc.contributor.author | Einzinger, Markus | |
dc.contributor.author | Kompalla, Julia | |
dc.contributor.author | Smith, Hannah L. | |
dc.contributor.author | Perkinson, Collin Fisher | |
dc.contributor.author | Nienhaus, Lea | |
dc.contributor.author | Wieghold, Sarah | |
dc.contributor.author | Congreve, Daniel Norbert | |
dc.contributor.author | Thompson, Nicholas J. | |
dc.contributor.author | Kahn, Antoine | |
dc.contributor.author | Bawendi, Moungi G | |
dc.contributor.author | Baldo, Marc A | |
dc.date.accessioned | 2021-02-09T21:43:02Z | |
dc.date.available | 2021-02-09T21:43:02Z | |
dc.date.issued | 2020-08 | |
dc.identifier.isbn | 9781510637344 | |
dc.identifier.isbn | 9781510637351 | |
dc.identifier.uri | https://hdl.handle.net/1721.1/129729 | |
dc.description.abstract | Singlet fission can split a high energy singlet exciton and generate two lower energy triplet excitons. This process has shown near 200 percent triplet exciton yield. Sensitizing solar cells with singlet fission material, it can potentially increase the power conversion efficiency limit from 29 percent to 35 percent. Singlet fission in the tetracene is known to be efficient, and the energy of the triplet excitons are energetically matched to the silicon bandgap. In this work, we designed an optical measurement with an external magnetic field to determine the efficiencies of triplet exciton transfer from tetracene to silicon. Using this method, we have found that a passivation layer of 8 angstroms of hafnium oxynitride on silicon allows efficient triplet exciton transfer around 133 percent. | en_US |
dc.language.iso | en | |
dc.publisher | Society of Photo-Optical Instrumentation Engineers (SPIE) | en_US |
dc.relation.isversionof | http://dx.doi.org/10.1117/12.2567365 | en_US |
dc.rights | Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. | en_US |
dc.source | SPIE | en_US |
dc.title | Sensitization of silicon by singlet exciton fission in tetracene | en_US |
dc.type | Article | en_US |
dc.identifier.citation | Wu, Tony C. et al. "Sensitization of silicon by singlet exciton fission in tetracene", Physical Chemistry of Semiconductor Materials and Interfaces XIX, Proceedings of SPIE, 11464, Society of Photo-Optical Instrumentation Engineers, 2020, 1146416. © 2020 SPIE. | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Research Laboratory of Electronics | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Department of Mechanical Engineering | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Department of Chemistry | en_US |
dc.relation.journal | Proceedings of SPIE | en_US |
dc.eprint.version | Final published version | en_US |
dc.type.uri | http://purl.org/eprint/type/ConferencePaper | en_US |
eprint.status | http://purl.org/eprint/status/NonPeerReviewed | en_US |
dc.date.updated | 2020-11-24T19:07:40Z | |
dspace.orderedauthors | Wu, TC; Einzinger, M; Kompalla, J; Smith, HL; Perkinson, CF; Nienhaus, L; Wieghold, S; Congreve, DN; Thompson, N; Kahn, A; Bawendi, MG; Baldo, MA | en_US |
dspace.date.submission | 2020-11-24T19:07:47Z | |
mit.journal.volume | 11464 | en_US |
mit.license | PUBLISHER_POLICY | |
mit.metadata.status | Complete | |