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dc.contributor.authorWu, Tony C
dc.contributor.authorEinzinger, Markus
dc.contributor.authorKompalla, Julia
dc.contributor.authorSmith, Hannah L.
dc.contributor.authorPerkinson, Collin Fisher
dc.contributor.authorNienhaus, Lea
dc.contributor.authorWieghold, Sarah
dc.contributor.authorCongreve, Daniel Norbert
dc.contributor.authorThompson, Nicholas J.
dc.contributor.authorKahn, Antoine
dc.contributor.authorBawendi, Moungi G
dc.contributor.authorBaldo, Marc A
dc.date.accessioned2021-02-09T21:43:02Z
dc.date.available2021-02-09T21:43:02Z
dc.date.issued2020-08
dc.identifier.isbn9781510637344
dc.identifier.isbn9781510637351
dc.identifier.urihttps://hdl.handle.net/1721.1/129729
dc.description.abstractSinglet fission can split a high energy singlet exciton and generate two lower energy triplet excitons. This process has shown near 200 percent triplet exciton yield. Sensitizing solar cells with singlet fission material, it can potentially increase the power conversion efficiency limit from 29 percent to 35 percent. Singlet fission in the tetracene is known to be efficient, and the energy of the triplet excitons are energetically matched to the silicon bandgap. In this work, we designed an optical measurement with an external magnetic field to determine the efficiencies of triplet exciton transfer from tetracene to silicon. Using this method, we have found that a passivation layer of 8 angstroms of hafnium oxynitride on silicon allows efficient triplet exciton transfer around 133 percent.en_US
dc.language.isoen
dc.publisherSociety of Photo-Optical Instrumentation Engineers (SPIE)en_US
dc.relation.isversionofhttp://dx.doi.org/10.1117/12.2567365en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceSPIEen_US
dc.titleSensitization of silicon by singlet exciton fission in tetraceneen_US
dc.typeArticleen_US
dc.identifier.citationWu, Tony C. et al. "Sensitization of silicon by singlet exciton fission in tetracene", Physical Chemistry of Semiconductor Materials and Interfaces XIX, Proceedings of SPIE, 11464, Society of Photo-Optical Instrumentation Engineers, 2020, 1146416. © 2020 SPIE.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Research Laboratory of Electronicsen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Mechanical Engineeringen_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Chemistryen_US
dc.relation.journalProceedings of SPIEen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/ConferencePaperen_US
eprint.statushttp://purl.org/eprint/status/NonPeerRevieweden_US
dc.date.updated2020-11-24T19:07:40Z
dspace.orderedauthorsWu, TC; Einzinger, M; Kompalla, J; Smith, HL; Perkinson, CF; Nienhaus, L; Wieghold, S; Congreve, DN; Thompson, N; Kahn, A; Bawendi, MG; Baldo, MAen_US
dspace.date.submission2020-11-24T19:07:47Z
mit.journal.volume11464en_US
mit.licensePUBLISHER_POLICY
mit.metadata.statusComplete


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