Broadband 2-µm emission on silicon chips: monolithically integrated Holmium lasers
Author(s)Li, Nanxi; Magden, Emir Salih; Su, Zhan; Singh, Neetesh; Ruocco, Alfonso; Xin, Ming; Byrd, Matthew James; Callahan, Patrick T.; Bradley, Jonathan; Baiocco, Christopher; Vermeulen, Diedrik Rene Georgette; Watts, Michael; ... Show more Show less
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Laser sources in the mid-infrared are of great interest due to their wide applications in detection, sensing, communication and medicine. Silicon photonics is a promising technology which enables these laser devices to be fabricated in a standard CMOS foundry, with the advantages of reliability, compactness, low cost and large-scale production. In this paper, we demonstrate a holmium-doped distributed feedback laser monolithically integrated on a silicon photonics platform. The Al₂O₃:Ho³⁺ glass is used as gain medium, which provides broadband emission around 2 µm. By varying the distributed feedback grating period and Al₂O₃:Ho³⁺ gain layer thickness, we show single mode laser emission at wavelengths ranging from 2.02 to 2.10 µm. Using a 1950 nm pump, we measure a maximum output power of 15 mW, a slope efficiency of 2.3% and a side-mode suppression ratio in excess of 50 dB. The introduction of a scalable monolithic light source emitting at < 2 µm is a significant step for silicon photonic microsystems operating in this highly promising wavelength region.
DepartmentMassachusetts Institute of Technology. Research Laboratory of Electronics; Lincoln Laboratory
Optical Society of America (OSA)
Li, Nanxi et al. "Broadband 2-µm emission on silicon chips: monolithically integrated Holmium lasers." Optics Express 26, 3 (January 2018): 2220-2230 © 2018 Optical Society of America
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