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Realization of 2D crystalline metal nitrides via selective atomic substitution

Author(s)
Cao, Jun; Li, Tianshu; Gao, Hongze; Lin, Yuxuan; Wang, Xingzhi; Wang, Haozhe; Palacios, Tomás; Ling, Xi; ... Show more Show less
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Creative Commons Attribution NonCommercial License 4.0 https://creativecommons.org/licenses/by-nc/4.0/
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Abstract
Two-dimensional (2D) transition metal nitrides (TMNs) are new members in the 2D materials family with a wide range of applications. Particularly, highly crystalline and large area thin films of TMNs are desirable for applications in electronic and optoelectronic devices; however, the synthesis of these TMNs has not yet been achieved. Here, we report the synthesis of few-nanometer thin Mo₅N₆ crystals with large area and high quality via in situ chemical conversion of layered MoS₂ crystals. The versatility of this general approach is demonstrated by expanding the method to synthesize W₅N₆ and TiN. Our strategy offers a new direction for preparing 2D TMNs with desirable characteristics, opening a door for studying fundamental physics and facilitating the development of next-generation electronics.
Date issued
2020-01
URI
https://hdl.handle.net/1721.1/129979
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Journal
Science Advances
Publisher
American Association for the Advancement of Science (AAAS)
Citation
Cao, Jun et al. "Realization of 2D crystalline metal nitrides via selective atomic substitution." Science Advances 6, 2 (January 2020): eaax8784.
Version: Final published version
ISSN
2375-2548

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