| dc.contributor.author | Cao, Jun | |
| dc.contributor.author | Li, Tianshu | |
| dc.contributor.author | Gao, Hongze | |
| dc.contributor.author | Lin, Yuxuan | |
| dc.contributor.author | Wang, Xingzhi | |
| dc.contributor.author | Wang, Haozhe | |
| dc.contributor.author | Palacios, Tomás | |
| dc.contributor.author | Ling, Xi | |
| dc.date.accessioned | 2021-02-23T20:39:44Z | |
| dc.date.available | 2021-02-23T20:39:44Z | |
| dc.date.issued | 2020-01 | |
| dc.date.submitted | 2019-05 | |
| dc.identifier.issn | 2375-2548 | |
| dc.identifier.uri | https://hdl.handle.net/1721.1/129979 | |
| dc.description.abstract | Two-dimensional (2D) transition metal nitrides (TMNs) are new members in the 2D materials family with a wide range of applications. Particularly, highly crystalline and large area thin films of TMNs are desirable for applications in electronic and optoelectronic devices; however, the synthesis of these TMNs has not yet been achieved. Here, we report the synthesis of few-nanometer thin Mo₅N₆ crystals with large area and high quality via in situ chemical conversion of layered MoS₂ crystals. The versatility of this general approach is demonstrated by expanding the method to synthesize W₅N₆ and TiN. Our strategy offers a new direction for preparing 2D TMNs with desirable characteristics, opening a door for studying fundamental physics and facilitating the development of next-generation electronics. | en_US |
| dc.description.sponsorship | Institute for Soldier Nanotechnologies, U.S. Army Research Office (Cooperative Agreement W911NF-18-2-0048) | en_US |
| dc.description.sponsorship | AFOSR FATE MURI (Grant FA9550-15-1-0514) | en_US |
| dc.description.sponsorship | NSF (Grant DMR 1231319) | en_US |
| dc.language.iso | en | |
| dc.publisher | American Association for the Advancement of Science (AAAS) | en_US |
| dc.relation.isversionof | 10.1126/SCIADV.AAX8784 | en_US |
| dc.rights | Creative Commons Attribution NonCommercial License 4.0 | en_US |
| dc.rights.uri | https://creativecommons.org/licenses/by-nc/4.0/ | en_US |
| dc.source | Science Advances | en_US |
| dc.title | Realization of 2D crystalline metal nitrides via selective atomic substitution | en_US |
| dc.type | Article | en_US |
| dc.identifier.citation | Cao, Jun et al. "Realization of 2D crystalline metal nitrides via selective atomic substitution." Science Advances 6, 2 (January 2020): eaax8784. | en_US |
| dc.contributor.department | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science | en_US |
| dc.relation.journal | Science Advances | en_US |
| dc.eprint.version | Final published version | en_US |
| dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
| eprint.status | http://purl.org/eprint/status/PeerReviewed | en_US |
| dc.date.updated | 2021-02-05T18:57:21Z | |
| dspace.orderedauthors | Cao, J; Li, T; Gao, H; Lin, Y; Wang, X; Wang, H; Palacios, T; Ling, X | en_US |
| dspace.date.submission | 2021-02-05T18:57:26Z | |
| mit.journal.volume | 6 | en_US |
| mit.journal.issue | 2 | en_US |
| mit.license | PUBLISHER_CC | |
| mit.metadata.status | Complete | |