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dc.contributor.authorCao, Jun
dc.contributor.authorLi, Tianshu
dc.contributor.authorGao, Hongze
dc.contributor.authorLin, Yuxuan
dc.contributor.authorWang, Xingzhi
dc.contributor.authorWang, Haozhe
dc.contributor.authorPalacios, Tomás
dc.contributor.authorLing, Xi
dc.date.accessioned2021-02-23T20:39:44Z
dc.date.available2021-02-23T20:39:44Z
dc.date.issued2020-01
dc.date.submitted2019-05
dc.identifier.issn2375-2548
dc.identifier.urihttps://hdl.handle.net/1721.1/129979
dc.description.abstractTwo-dimensional (2D) transition metal nitrides (TMNs) are new members in the 2D materials family with a wide range of applications. Particularly, highly crystalline and large area thin films of TMNs are desirable for applications in electronic and optoelectronic devices; however, the synthesis of these TMNs has not yet been achieved. Here, we report the synthesis of few-nanometer thin Mo₅N₆ crystals with large area and high quality via in situ chemical conversion of layered MoS₂ crystals. The versatility of this general approach is demonstrated by expanding the method to synthesize W₅N₆ and TiN. Our strategy offers a new direction for preparing 2D TMNs with desirable characteristics, opening a door for studying fundamental physics and facilitating the development of next-generation electronics.en_US
dc.description.sponsorshipInstitute for Soldier Nanotechnologies, U.S. Army Research Office (Cooperative Agreement W911NF-18-2-0048)en_US
dc.description.sponsorshipAFOSR FATE MURI (Grant FA9550-15-1-0514)en_US
dc.description.sponsorshipNSF (Grant DMR 1231319)en_US
dc.language.isoen
dc.publisherAmerican Association for the Advancement of Science (AAAS)en_US
dc.relation.isversionof10.1126/SCIADV.AAX8784en_US
dc.rightsCreative Commons Attribution NonCommercial License 4.0en_US
dc.rights.urihttps://creativecommons.org/licenses/by-nc/4.0/en_US
dc.sourceScience Advancesen_US
dc.titleRealization of 2D crystalline metal nitrides via selective atomic substitutionen_US
dc.typeArticleen_US
dc.identifier.citationCao, Jun et al. "Realization of 2D crystalline metal nitrides via selective atomic substitution." Science Advances 6, 2 (January 2020): eaax8784.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.relation.journalScience Advancesen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2021-02-05T18:57:21Z
dspace.orderedauthorsCao, J; Li, T; Gao, H; Lin, Y; Wang, X; Wang, H; Palacios, T; Ling, Xen_US
dspace.date.submission2021-02-05T18:57:26Z
mit.journal.volume6en_US
mit.journal.issue2en_US
mit.licensePUBLISHER_CC
mit.metadata.statusComplete


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