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dc.contributor.authorRughoobur, Girish
dc.contributor.authorJain, Lay
dc.contributor.authorAkinwande, Akintunde I
dc.date.accessioned2021-05-13T12:58:26Z
dc.date.available2021-05-13T12:58:26Z
dc.date.issued2021-04
dc.date.submitted2021-03
dc.identifier.issn0957-4484
dc.identifier.issn1361-6528
dc.identifier.urihttps://hdl.handle.net/1721.1/130588
dc.description.abstractWe experimentally demonstrate the transmission of electrons through different number (1, 2, and 5) of suspended graphene layers at electron energies between 20 and 250 eV. Electrons with initial energies lower than 40 eV are generated using silicon field emitter arrays with 1 μm pitch, and accelerated towards the graphene layers supported by a silicon nitride grid biased at voltages from −20 to 200 V. We measured significant increase in current collected at the anode with the presence of graphene, which is attributed to the possible generation of secondary electrons by primary electrons impinging on the graphene membrane. Highest output current was recorded with monolayer graphene at approximately 90 eV, with up to 1.7 times the incident current. The transparency of graphene to low-energy electrons and its impermeability to gas molecules could enable low-voltage field emission electron sources, which often require ultra-high vacuum, to operate in a relatively poor vacuum environment.en_US
dc.description.sponsorshipAFOSR/MURI (Contract FA9550-18-1-0436)en_US
dc.description.sponsorshipDARPA (Contract N66001-16-1-4038)en_US
dc.publisherIOP Publishingen_US
dc.relation.isversionofhttp://dx.doi.org/10.1088/1361-6528/abf5fben_US
dc.rightsCreative Commons Attribution-Noncommercial-Share Alikeen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/4.0/en_US
dc.sourceGirish Rughooburen_US
dc.titleElectron transmission through suspended graphene membranes measured with a low-voltage gated Si field emitter arrayen_US
dc.typeArticleen_US
dc.identifier.citationRughoobur, Girish et al. "Electron transmission through suspended graphene membranes measured with a low-voltage gated Si field emitter array." Nanotechnology 32, 28 (April 2021): 285201. © 2021 IOP Publishing Ltden_US
dc.contributor.departmentMassachusetts Institute of Technology. Microsystems Technology Laboratoriesen_US
dc.relation.journalNanotechnologyen_US
dc.eprint.versionAuthor's final manuscripten_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dspace.date.submission2021-04-09T02:34:36Z
mit.journal.volume32en_US
mit.journal.issue28en_US
mit.licenseOPEN_ACCESS_POLICY
mit.metadata.statusComplete


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