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A 12-Gb/s Stacked Dual-Channel Interface for CMOS Image Sensor Systems
Author(s)
Kim, Sang-Hoon; Shin, Hoon; Jeong, Youngkyun; Lee, June-Hee; Choi, Jaehyuk; Chun, Jung-Hoon; ... Show more Show less
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© 2018 by the authors. Licensee MDPI, Basel, Switzerland. We propose a dual-channel interface architecture that allocates high and low transition-density bit streams to two separate channels. The transmitter utilizes the stacked drivers with charge-recycling to reduce the power consumption. The direct current (DC)-coupled receiver front-end circuits manage the common-mode level variations and compensate for the channel loss. The tracked oversampling clock and data recovery (CDR), which realizes fast lock acquisition below 1 baud period and low logic latency, is shared by the two channels. Fabricated in a 65-nm low-power complementary metal-oxide semiconductor (CMOS) technology, the dual-channel transceiver achieves 12-Gb/s data rate while the transmitter consumes 20.43 mW from a 1.2-V power supply.
Journal
Sensors
Citation
Kim, Sang-Hoon, Hoon Shin, Youngkyun Jeong, June-Hee Lee, Jaehyuk Choi, and Jung-Hoon Chun. “A 12-Gb/s Stacked Dual-Channel Interface for CMOS Image Sensor Systems.” Sensors 18, no. 8 (August 17, 2018): 2709. doi:10.3390/s18082709.
Version: Final published version
ISSN
1424-8220
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