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dc.contributor.authorHao, Ran
dc.contributor.authorYe, Ziwei
dc.contributor.authorGu, YiJie
dc.contributor.authorPeng, Xiliang
dc.contributor.authorChen, Hongsheng
dc.contributor.authorLi, Erping
dc.contributor.authorHao, Ran
dc.contributor.authorYe, Ziwei
dc.contributor.authorGu, YiJie
dc.contributor.authorPeng, Xiliang
dc.contributor.authorChen, Hongsheng
dc.contributor.authorLi, Erping
dc.date.accessioned2022-08-18T16:54:03Z
dc.date.available2021-09-20T18:21:13Z
dc.date.available2022-08-18T16:54:03Z
dc.date.issued2018-11
dc.identifier.issn2045-2322
dc.identifier.urihttps://hdl.handle.net/1721.1/132164.2
dc.description.abstract© 2018, The Author(s). We present an effective scheme to improve the modulation capacity in graphene-based silicon modulator by employing the double slots configuration with hybrid plasmonic effects. Two modulators, i.e., metal-insulator-metal and insulator-metal-insulator configurations have been demonstrated, showing that the double slots design can significantly improve the modulation efficiency. The obtained modulation efficiency is up to 0.525 dB/μm per graphene layer, far exceeding previous studies. It can be found that the light-graphene interaction plays a pivotal role in the modulation efficiency, whereas the height of metal has profound influence on the modulation. Our results may promote various future modulation devices based on graphene.en_US
dc.relation.isversionofhttp://dx.doi.org/10.1038/s41598-018-34914-6en_US
dc.rightsCreative Commons Attribution 4.0 International licenseen_US
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en_US
dc.sourceScientific Reportsen_US
dc.titleLarge modulation capacity in graphene-based slot modulators by enhanced hybrid plasmonic effectsen_US
dc.typeArticleen_US
dc.identifier.citationHao, Ran, Ziwei Ye, YiJie Gu, Xiliang Peng, Hongsheng Chen, and Erping Li. “Large Modulation Capacity in Graphene-Based Slot Modulators by Enhanced Hybrid Plasmonic Effects.” Scientific Reports 8, no. 1 (November 15, 2018). doi:10.1038/s41598-018-34914-6.en_US
dc.contributor.departmentMassachusetts Institute of Technology. Research Laboratory of Electronicsen_US
dc.relation.journalScientific Reportsen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2019-02-15T15:55:36Z
dspace.orderedauthorsHao, Ran; Ye, Ziwei; Gu, YiJie; Peng, Xiliang; Chen, Hongsheng; Li, Erpingen_US
dspace.embargo.termsNen_US
dspace.date.submission2019-04-04T15:27:50Z
mit.licensePUBLISHER_CCen_US
mit.metadata.statusPublication Information Neededen_US


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