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dc.contributor.authorMilanowski, Randall
dc.contributor.authorAniceto, Raichelle
dc.contributor.authorHardy, Fred
dc.contributor.authorVermeire, Bert
dc.contributor.authorJacox, Michael
dc.contributor.authorMoro, Slaven
dc.contributor.authorCahoy, Kerri
dc.date.accessioned2021-11-09T15:17:05Z
dc.date.available2021-11-09T15:17:05Z
dc.date.issued2017-07
dc.identifier.urihttps://hdl.handle.net/1721.1/137914
dc.description.abstract© 2017 IEEE. Commercial off-the-shelf 12-Megapixel CMOS image sensors were irradiated with 105 MeV protons - one part to a fluence of 4×1011 protons/cm2, and a second part to 2×1011 protons/cm2. Pixel brightness increases with fluence along with annealing effects are reported. No latch-up events or hangs occurred.en_US
dc.language.isoen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en_US
dc.relation.isversionof10.1109/nsrec.2017.8115465en_US
dc.rightsCreative Commons Attribution-Noncommercial-Share Alikeen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/4.0/en_US
dc.sourceProf. Cahoy via Barbara Williamsen_US
dc.titleProton Radiation Effects Assessment of a Commercial 12-Megapixel CMOS Imageren_US
dc.typeArticleen_US
dc.identifier.citationMilanowski, Randall, Aniceto, Raichelle, Hardy, Fred, Vermeire, Bert, Jacox, Michael et al. 2017. "Proton Radiation Effects Assessment of a Commercial 12-Megapixel CMOS Imager."
dc.eprint.versionAuthor's final manuscripten_US
dc.type.urihttp://purl.org/eprint/type/ConferencePaperen_US
eprint.statushttp://purl.org/eprint/status/NonPeerRevieweden_US
dc.date.updated2019-07-29T18:34:05Z
dspace.date.submission2019-07-29T18:34:07Z
mit.metadata.statusAuthority Work and Publication Information Neededen_US


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