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Proton Radiation Effects Assessment of a Commercial 12-Megapixel CMOS Imager
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© 2017 IEEE. Commercial off-the-shelf 12-Megapixel CMOS image sensors were irradiated with 105 MeV protons - one part to a fluence of 4×1011 protons/cm2, and a second part to 2×1011 protons/cm2. Pixel brightness increases with fluence along with annealing effects are reported. No latch-up events or hangs occurred.
Date issued
2017-07Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Milanowski, Randall, Aniceto, Raichelle, Hardy, Fred, Vermeire, Bert, Jacox, Michael et al. 2017. "Proton Radiation Effects Assessment of a Commercial 12-Megapixel CMOS Imager."
Version: Author's final manuscript