Defect-Level Switching for Highly Nonlinear and Hysteretic Electronic Devices

Author(s)
Yin, Han; Kumar, Abinash; LeBeau, James M.; Jaramillo, R.
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Date issued
2021-01-08
URI
https://hdl.handle.net/1721.1/139808
Department
Massachusetts Institute of Technology. Department of Mechanical Engineering; Massachusetts Institute of Technology. Department of Materials Science and Engineering
Journal
Physical Review Applied
Publisher
American Physical Society (APS)
Citation
Yin, Han, Kumar, Abinash, LeBeau, James M. and Jaramillo, R. 2021. "Defect-Level Switching for Highly Nonlinear and Hysteretic Electronic Devices." Physical Review Applied, 15 (1).
Version: Final published version
ISSN
2331-7019
Keywords
General Physics and Astronomy
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