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dc.contributor.authorYin, Han
dc.contributor.authorKumar, Abinash
dc.contributor.authorLeBeau, James M.
dc.contributor.authorJaramillo, R.
dc.date.accessioned2022-01-31T18:32:40Z
dc.date.available2022-01-31T18:32:40Z
dc.date.issued2021-01-08
dc.identifier.issn2331-7019
dc.identifier.urihttps://hdl.handle.net/1721.1/139808
dc.description.sponsorshipDepartment of Defense (DoD)en_US
dc.description.sponsorshipNational Science Foundation (NSF)en_US
dc.publisherAmerican Physical Society (APS)en_US
dc.relation.isversionof10.1103/physrevapplied.15.014014en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceAPSen_US
dc.subjectGeneral Physics and Astronomyen_US
dc.titleDefect-Level Switching for Highly Nonlinear and Hysteretic Electronic Devicesen_US
dc.typeArticleen_US
dc.identifier.citationYin, Han, Kumar, Abinash, LeBeau, James M. and Jaramillo, R. 2021. "Defect-Level Switching for Highly Nonlinear and Hysteretic Electronic Devices." Physical Review Applied, 15 (1).
dc.contributor.departmentMassachusetts Institute of Technology. Department of Mechanical Engineering
dc.contributor.departmentMassachusetts Institute of Technology. Department of Materials Science and Engineering
dc.relation.journalPhysical Review Applieden_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.identifier.doi10.1103/PhysRevApplied.15.014014
dspace.date.submission2022-01-31T13:35:52Z
mit.journal.volume15en_US
mit.journal.issue1en_US
mit.licenseOPEN_ACCESS_POLICY
mit.licensePUBLISHER_POLICY
mit.metadata.statusAuthority Work and Publication Information Neededen_US


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