Photonic Platforms Using In‐Plane Optical Anisotropy of Tin (II) Selenide and Black Phosphorus

Abstract

Among layered and 2D semiconductors, there are many with substantial opticalanisotropy within individual layers, including group-IV monochalcogenidesMX(M¼Ge or Sn andX¼S or Se) and black phosphorous (bP). Recent work hassuggested that the in-plane crystal orientation in such materials can be switched(e.g., rotated through 90 ) through an ultrafast, displacive (i.e., nondiffusive),nonthermal, and lower-power mechanism by strong electricfields, due toin-plane dielectric anisotropy. In theory, this represents a new mechanism forlight-controlling-light in photonic integrated circuits (PICs). Herein, numericaldevice modeling is used to study device concepts based on switching the crystalorientation of SnSe and bP in PICs. Ring resonators and 1 2 switches withresonant conditions that change with the in-plane crystal orientations SnSe andbP are simulated. The results are broadly applicable to 2D materials with fer-roelectric and ferroelastic crystal structures including SnO, GeS, and GeSe.RESEARCH ARTICLEwww.adpr-journal.comAdv. Photonics Res.2021,2, 21001762100176 (1 of 6)© 2021 The Authors. Advanced Photonics Research published by Wiley-VCH GmbH