Notice
This is not the latest version of this item. The latest version can be found at:https://dspace.mit.edu/handle/1721.1/139809.2
Photonic Platforms Using In‐Plane Optical Anisotropy of Tin (II) Selenide and Black Phosphorus
DownloadPublished version (2.398Mb)
Publisher with Creative Commons License
Publisher with Creative Commons License
Creative Commons Attribution
Terms of use
Metadata
Show full item recordAbstract
Among layered and 2D semiconductors, there are many with substantial opticalanisotropy within individual layers, including group-IV monochalcogenidesMX(M¼Ge or Sn andX¼S or Se) and black phosphorous (bP). Recent work hassuggested that the in-plane crystal orientation in such materials can be switched(e.g., rotated through 90 ) through an ultrafast, displacive (i.e., nondiffusive),nonthermal, and lower-power mechanism by strong electricfields, due toin-plane dielectric anisotropy. In theory, this represents a new mechanism forlight-controlling-light in photonic integrated circuits (PICs). Herein, numericaldevice modeling is used to study device concepts based on switching the crystalorientation of SnSe and bP in PICs. Ring resonators and 1 2 switches withresonant conditions that change with the in-plane crystal orientations SnSe andbP are simulated. The results are broadly applicable to 2D materials with fer-roelectric and ferroelastic crystal structures including SnO, GeS, and GeSe.RESEARCH ARTICLEwww.adpr-journal.comAdv. Photonics Res.2021,2, 21001762100176 (1 of 6)© 2021 The Authors. Advanced Photonics Research published by Wiley-VCH GmbH
Date issued
2021Journal
Advanced Photonics Research
Publisher
Wiley
Citation
Jo, Seong Soon, Wu, Changming, Zhu, Linghan, Yang, Li, Li, Mo et al. 2021. "Photonic Platforms Using In‐Plane Optical Anisotropy of Tin (II) Selenide and Black Phosphorus." Advanced Photonics Research, 2 (12).
Version: Final published version