GaN Nanowire Field Emitters with a Self-Aligned Gate Process
Author(s)
Shih, Pao-Chuan; Rughoobur, Girish; Xiang, Peng; Liu, Kai; Cheng, Kai; Akinwande, Akintunde I.; Palacios, Tomas; ... Show more Show less
DownloadDRC_GaN Field Emitters with A Self-Aligned Gate Process_PC Shih.pdf (302.1Kb)
Open Access Policy
Open Access Policy
Creative Commons Attribution-Noncommercial-Share Alike
Terms of use
Metadata
Show full item recordDate issued
2020-06Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Microsystems Technology LaboratoriesJournal
2020 Device Research Conference (DRC)
Publisher
IEEE
Citation
Shih, Pao-Chuan, Rughoobur, Girish, Xiang, Peng, Liu, Kai, Cheng, Kai et al. 2020. "GaN Nanowire Field Emitters with a Self-Aligned Gate Process." 2020 Device Research Conference (DRC).
Version: Author's final manuscript