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GaN Nanowire Field Emitters with a Self-Aligned Gate Process

dc.contributor.authorShih, Pao-Chuan
dc.contributor.authorRughoobur, Girish
dc.contributor.authorXiang, Peng
dc.contributor.authorLiu, Kai
dc.contributor.authorCheng, Kai
dc.contributor.authorAkinwande, Akintunde I.
dc.contributor.authorPalacios, Tomas
dc.date.accessioned2022-04-19T15:42:46Z
dc.date.available2022-04-19T15:42:46Z
dc.date.issued2020-06
dc.identifier.urihttps://hdl.handle.net/1721.1/141927
dc.description.sponsorshipDepartment of Defense (DoD)en_US
dc.publisherIEEEen_US
dc.relation.isversionof10.1109/drc50226.2020.9135161en_US
dc.rightsCreative Commons Attribution-Noncommercial-Share Alikeen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/4.0/en_US
dc.sourcePao-Chuan Shihen_US
dc.titleGaN Nanowire Field Emitters with a Self-Aligned Gate Processen_US
dc.typeArticleen_US
dc.identifier.citationShih, Pao-Chuan, Rughoobur, Girish, Xiang, Peng, Liu, Kai, Cheng, Kai et al. 2020. "GaN Nanowire Field Emitters with a Self-Aligned Gate Process." 2020 Device Research Conference (DRC).
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
dc.contributor.departmentMassachusetts Institute of Technology. Microsystems Technology Laboratories
dc.relation.journal2020 Device Research Conference (DRC)en_US
dc.eprint.versionAuthor's final manuscripten_US
dc.type.urihttp://purl.org/eprint/type/ConferencePaperen_US
eprint.statushttp://purl.org/eprint/status/NonPeerRevieweden_US
dc.identifier.doi10.1109/DRC50226.2020.9135161
dspace.date.submission2022-04-19T01:59:53Z
mit.licenseOPEN_ACCESS_POLICY
mit.metadata.statusAuthority Work and Publication Information Neededen_US


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