Wet-based digital etching on GaN and AlGaN

Author(s)
Shih, Pao-Chuan; Engel, Zachary; Ahmad, Habib; Doolittle, William Alan; Palacios, Tomás
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Creative Commons Attribution-Noncommercial-Share Alike http://creativecommons.org/licenses/by-nc-sa/4.0/
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Date issued
2022-01-10
URI
https://hdl.handle.net/1721.1/141928
Department
Massachusetts Institute of Technology. Microsystems Technology Laboratories
Journal
Applied Physics Letters
Publisher
AIP Publishing
Citation
Shih, Pao-Chuan, Engel, Zachary, Ahmad, Habib, Doolittle, William Alan and Palacios, Tomás. 2022. "Wet-based digital etching on GaN and AlGaN." Applied Physics Letters, 120 (2).
Version: Author's final manuscript
ISSN
0003-6951
1077-3118
Keywords
Physics and Astronomy (miscellaneous)
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