| dc.contributor.author | Shih, Pao-Chuan | |
| dc.contributor.author | Engel, Zachary | |
| dc.contributor.author | Ahmad, Habib | |
| dc.contributor.author | Doolittle, William Alan | |
| dc.contributor.author | Palacios, Tomás | |
| dc.date.accessioned | 2022-04-19T15:43:03Z | |
| dc.date.available | 2022-04-19T15:43:03Z | |
| dc.date.issued | 2022-01-10 | |
| dc.identifier.issn | 0003-6951 | |
| dc.identifier.issn | 1077-3118 | |
| dc.identifier.uri | https://hdl.handle.net/1721.1/141928 | |
| dc.description.sponsorship | Department of Defense (DoD) | en_US |
| dc.publisher | AIP Publishing | en_US |
| dc.relation.isversionof | 10.1063/5.0074443 | en_US |
| dc.rights | Creative Commons Attribution-Noncommercial-Share Alike | en_US |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-sa/4.0/ | en_US |
| dc.source | Pao-Chuan Shih | en_US |
| dc.subject | Physics and Astronomy (miscellaneous) | en_US |
| dc.title | Wet-based digital etching on GaN and AlGaN | en_US |
| dc.type | Article | en_US |
| dc.identifier.citation | Shih, Pao-Chuan, Engel, Zachary, Ahmad, Habib, Doolittle, William Alan and Palacios, Tomás. 2022. "Wet-based digital etching on GaN and AlGaN." Applied Physics Letters, 120 (2). | |
| dc.contributor.department | Massachusetts Institute of Technology. Microsystems Technology Laboratories | |
| dc.relation.journal | Applied Physics Letters | en_US |
| dc.eprint.version | Author's final manuscript | en_US |
| dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
| eprint.status | http://purl.org/eprint/status/PeerReviewed | en_US |
| dc.identifier.doi | 10.1063/5.0074443 | |
| dspace.date.submission | 2022-04-19T02:03:02Z | |
| mit.journal.volume | 120 | en_US |
| mit.journal.issue | 2 | en_US |
| mit.license | OPEN_ACCESS_POLICY | |
| mit.metadata.status | Authority Work and Publication Information Needed | en_US |
