Self-Align-Gated GaN Field Emitter Arrays Sharpened by a Digital Etching Process

Author(s)
Shih, Pao-Chuan; Rughoobur, Girish; Cheng, Kai; Akinwande, Akintunde I.; Palacios, Tomas
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Creative Commons Attribution-Noncommercial-Share Alike http://creativecommons.org/licenses/by-nc-sa/4.0/
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Date issued
2021-03
URI
https://hdl.handle.net/1721.1/141929
Department
Massachusetts Institute of Technology. Microsystems Technology Laboratories
Journal
IEEE Electron Device Letters
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Shih, Pao-Chuan, Rughoobur, Girish, Cheng, Kai, Akinwande, Akintunde I. and Palacios, Tomas. 2021. "Self-Align-Gated GaN Field Emitter Arrays Sharpened by a Digital Etching Process." IEEE Electron Device Letters, 42 (3).
Version: Author's final manuscript
ISSN
0741-3106
1558-0563
Keywords
Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials
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