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dc.contributor.authorShih, Pao-Chuan
dc.contributor.authorRughoobur, Girish
dc.contributor.authorCheng, Kai
dc.contributor.authorAkinwande, Akintunde I.
dc.contributor.authorPalacios, Tomas
dc.date.accessioned2022-04-19T15:43:28Z
dc.date.available2022-04-19T15:43:28Z
dc.date.issued2021-03
dc.identifier.issn0741-3106
dc.identifier.issn1558-0563
dc.identifier.urihttps://hdl.handle.net/1721.1/141929
dc.description.sponsorshipDepartment of Defense (DoD)en_US
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en_US
dc.relation.isversionof10.1109/led.2021.3052715en_US
dc.rightsCreative Commons Attribution-Noncommercial-Share Alikeen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/4.0/en_US
dc.sourcePao-Chuan Shihen_US
dc.subjectElectrical and Electronic Engineeringen_US
dc.subjectElectronic, Optical and Magnetic Materialsen_US
dc.titleSelf-Align-Gated GaN Field Emitter Arrays Sharpened by a Digital Etching Processen_US
dc.typeArticleen_US
dc.identifier.citationShih, Pao-Chuan, Rughoobur, Girish, Cheng, Kai, Akinwande, Akintunde I. and Palacios, Tomas. 2021. "Self-Align-Gated GaN Field Emitter Arrays Sharpened by a Digital Etching Process." IEEE Electron Device Letters, 42 (3).
dc.contributor.departmentMassachusetts Institute of Technology. Microsystems Technology Laboratories
dc.relation.journalIEEE Electron Device Lettersen_US
dc.eprint.versionAuthor's final manuscripten_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.identifier.doi10.1109/LED.2021.3052715
dspace.date.submission2022-04-19T01:54:12Z
mit.journal.volume42en_US
mit.journal.issue3en_US
mit.licenseOPEN_ACCESS_POLICY
mit.metadata.statusAuthority Work and Publication Information Neededen_US


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