dc.contributor.author | Shih, Pao-Chuan | |
dc.contributor.author | Rughoobur, Girish | |
dc.contributor.author | Cheng, Kai | |
dc.contributor.author | Akinwande, Akintunde I. | |
dc.contributor.author | Palacios, Tomas | |
dc.date.accessioned | 2022-04-19T15:43:28Z | |
dc.date.available | 2022-04-19T15:43:28Z | |
dc.date.issued | 2021-03 | |
dc.identifier.issn | 0741-3106 | |
dc.identifier.issn | 1558-0563 | |
dc.identifier.uri | https://hdl.handle.net/1721.1/141929 | |
dc.description.sponsorship | Department of Defense (DoD) | en_US |
dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) | en_US |
dc.relation.isversionof | 10.1109/led.2021.3052715 | en_US |
dc.rights | Creative Commons Attribution-Noncommercial-Share Alike | en_US |
dc.rights.uri | http://creativecommons.org/licenses/by-nc-sa/4.0/ | en_US |
dc.source | Pao-Chuan Shih | en_US |
dc.subject | Electrical and Electronic Engineering | en_US |
dc.subject | Electronic, Optical and Magnetic Materials | en_US |
dc.title | Self-Align-Gated GaN Field Emitter Arrays Sharpened by a Digital Etching Process | en_US |
dc.type | Article | en_US |
dc.identifier.citation | Shih, Pao-Chuan, Rughoobur, Girish, Cheng, Kai, Akinwande, Akintunde I. and Palacios, Tomas. 2021. "Self-Align-Gated GaN Field Emitter Arrays Sharpened by a Digital Etching Process." IEEE Electron Device Letters, 42 (3). | |
dc.contributor.department | Massachusetts Institute of Technology. Microsystems Technology Laboratories | |
dc.relation.journal | IEEE Electron Device Letters | en_US |
dc.eprint.version | Author's final manuscript | en_US |
dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
eprint.status | http://purl.org/eprint/status/PeerReviewed | en_US |
dc.identifier.doi | 10.1109/LED.2021.3052715 | |
dspace.date.submission | 2022-04-19T01:54:12Z | |
mit.journal.volume | 42 | en_US |
mit.journal.issue | 3 | en_US |
mit.license | OPEN_ACCESS_POLICY | |
mit.metadata.status | Authority Work and Publication Information Needed | en_US |