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Tuning band alignment at a semiconductor-crystalline oxide heterojunction via electrostatic modulation of the interfacial dipole

Author(s)
Chrysler, M; Gabel, J; Lee, T-L; Penn, AN; Matthews, BE; Kepaptsoglou, DM; Ramasse, QM; Paudel, JR; Sah, RK; Grassi, JD; Zhu, Z; Gray, AX; LeBeau, JM; Spurgeon, SR; Chambers, SA; Sushko, PV; Ngai, JH; ... Show more Show less
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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.

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Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
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Date issued
2021
URI
https://hdl.handle.net/1721.1/142615
Department
Massachusetts Institute of Technology. Department of Materials Science and Engineering
Journal
Physical Review Materials
Publisher
American Physical Society (APS)
Citation
Chrysler, M, Gabel, J, Lee, T-L, Penn, AN, Matthews, BE et al. 2021. "Tuning band alignment at a semiconductor-crystalline oxide heterojunction via electrostatic modulation of the interfacial dipole." Physical Review Materials, 5 (10).
Version: Final published version

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