Significant reduction in semiconductor interface resistance via interfacial atomic mixing

Author(s)
Song, Qichen; Zhou, Jiawei; Chen, Gang
Thumbnail
DownloadPhysRevB.105.195306.pdf (2.558Mb)
Publisher Policy
Terms of use
Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.
Metadata
Show full item record
Date issued
2022-05-11
URI
https://hdl.handle.net/1721.1/143487
Department
Massachusetts Institute of Technology. Department of Mechanical Engineering
Journal
Physical Review B
Publisher
American Physical Society (APS)
Citation
Song, Qichen, Zhou, Jiawei and Chen, Gang. 2022. "Significant reduction in semiconductor interface resistance via interfacial atomic mixing." Physical Review B, 105 (19).
Version: Final published version
ISSN
2469-9950
2469-9969
Collections