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dc.contributor.authorSong, Qichen
dc.contributor.authorZhou, Jiawei
dc.contributor.authorChen, Gang
dc.date.accessioned2022-06-21T15:15:15Z
dc.date.available2022-06-21T15:15:15Z
dc.date.issued2022-05-11
dc.identifier.issn2469-9950
dc.identifier.issn2469-9969
dc.identifier.urihttps://hdl.handle.net/1721.1/143487
dc.description.sponsorshipNational Science Foundation (NSF)en_US
dc.publisherAmerican Physical Society (APS)en_US
dc.relation.isversionof10.1103/physrevb.105.195306en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceAPSen_US
dc.titleSignificant reduction in semiconductor interface resistance via interfacial atomic mixingen_US
dc.typeArticleen_US
dc.identifier.citationSong, Qichen, Zhou, Jiawei and Chen, Gang. 2022. "Significant reduction in semiconductor interface resistance via interfacial atomic mixing." Physical Review B, 105 (19).
dc.contributor.departmentMassachusetts Institute of Technology. Department of Mechanical Engineering
dc.relation.journalPhysical Review Ben_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.identifier.doi10.1103/PhysRevB.105.195306
dspace.date.submission2022-05-16T13:58:39Z
mit.journal.volume105en_US
mit.journal.issue19en_US
mit.licensePUBLISHER_POLICY
mit.metadata.statusAuthority Work and Publication Information Neededen_US


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