Tungsten-Gated GaN/AlGaN p -FET With I max > 120 mA/mm on GaN-on-Si

Author(s)
Chowdhury, Nadim; Xie, Qingyun; Palacios, Tomas
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Date issued
2022
URI
https://hdl.handle.net/1721.1/143831
Department
Massachusetts Institute of Technology. Microsystems Technology Laboratories
Journal
IEEE Electron Device Letters
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Chowdhury, Nadim, Xie, Qingyun and Palacios, Tomas. 2022. "Tungsten-Gated GaN/AlGaN p -FET With I max > 120 mA/mm on GaN-on-Si." IEEE Electron Device Letters, 43 (4).
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