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Tungsten-Gated GaN/AlGaN p -FET With I max > 120 mA/mm on GaN-on-Si

dc.contributor.authorChowdhury, Nadim
dc.contributor.authorXie, Qingyun
dc.contributor.authorPalacios, Tomas
dc.date.accessioned2022-07-18T18:05:34Z
dc.date.available2022-07-18T18:05:34Z
dc.date.issued2022
dc.identifier.urihttps://hdl.handle.net/1721.1/143831
dc.language.isoen
dc.publisherInstitute of Electrical and Electronics Engineers (IEEE)en_US
dc.relation.isversionof10.1109/LED.2022.3149659en_US
dc.rightsCreative Commons Attribution-Noncommercial-Share Alikeen_US
dc.rights.urihttp://creativecommons.org/licenses/by-nc-sa/4.0/en_US
dc.sourceOther repositoryen_US
dc.titleTungsten-Gated GaN/AlGaN p -FET With I max > 120 mA/mm on GaN-on-Sien_US
dc.typeArticleen_US
dc.identifier.citationChowdhury, Nadim, Xie, Qingyun and Palacios, Tomas. 2022. "Tungsten-Gated GaN/AlGaN p -FET With I max > 120 mA/mm on GaN-on-Si." IEEE Electron Device Letters, 43 (4).
dc.contributor.departmentMassachusetts Institute of Technology. Microsystems Technology Laboratories
dc.relation.journalIEEE Electron Device Lettersen_US
dc.eprint.versionAuthor's final manuscripten_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2022-07-18T17:59:21Z
dspace.orderedauthorsChowdhury, N; Xie, Q; Palacios, Ten_US
dspace.date.submission2022-07-18T17:59:26Z
mit.journal.volume43en_US
mit.journal.issue4en_US
mit.licenseOPEN_ACCESS_POLICY
mit.metadata.statusAuthority Work and Publication Information Neededen_US


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