dc.contributor.author | Lee, Ethan S | |
dc.contributor.author | Joh, Jungwoo | |
dc.contributor.author | Lee, Dong Seup | |
dc.contributor.author | del Alamo, Jesús A | |
dc.date.accessioned | 2022-09-19T12:24:49Z | |
dc.date.available | 2022-09-19T12:24:49Z | |
dc.date.issued | 2022 | |
dc.identifier.uri | https://hdl.handle.net/1721.1/145471 | |
dc.description.abstract | <jats:p> In this Letter, we experimentally investigate the impact of gate geometry on forward operation of Schottky-gate p-GaN high electron mobility transistors (HEMTs). In particular, we analyze devices with changing gate-metal/p-GaN junction area and p-GaN/AlGaN/GaN heterostructure area in the linear regime. These devices exhibit unique threshold voltage and subthreshold swing scaling dependence with gate geometry that is in contrast with classic field-effect transistors. On the other hand, peak transconductance and ON resistance are found to scale classically. We find that these results arise from the fact that with a Schottky contact to the p-GaN layer, under steady-state conditions, the p-GaN layer voltage is set by current continuity across the gate stack. Furthermore, a detailed scaling study of the gate current reveals that current flow across the p-GaN/AlGaN/GaN heterostructure is not uniform—instead, it preferentially flows through the ungated portion of the p-GaN layer. Our study concludes that in Schottky-type p-GaN gate HEMTs, the respective areas of two junctions constitute an additional design degree of freedom to fine-tune device performance. </jats:p> | en_US |
dc.language.iso | en | |
dc.publisher | AIP Publishing | en_US |
dc.relation.isversionof | 10.1063/5.0084123 | en_US |
dc.rights | Creative Commons Attribution 4.0 International license | en_US |
dc.rights.uri | https://creativecommons.org/licenses/by/4.0/ | en_US |
dc.source | American Institute of Physics (AIP) | en_US |
dc.title | Gate-geometry dependence of electrical characteristics of p-GaN gate HEMTs | en_US |
dc.type | Article | en_US |
dc.identifier.citation | Lee, Ethan S, Joh, Jungwoo, Lee, Dong Seup and del Alamo, Jesús A. 2022. "Gate-geometry dependence of electrical characteristics of p-GaN gate HEMTs." Applied Physics Letters, 120 (8). | |
dc.contributor.department | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Microsystems Technology Laboratories | en_US |
dc.relation.journal | Applied Physics Letters | en_US |
dc.eprint.version | Final published version | en_US |
dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
eprint.status | http://purl.org/eprint/status/PeerReviewed | en_US |
dc.date.updated | 2022-09-19T12:13:57Z | |
dspace.orderedauthors | Lee, ES; Joh, J; Lee, DS; del Alamo, JA | en_US |
dspace.date.submission | 2022-09-19T12:13:59Z | |
mit.journal.volume | 120 | en_US |
mit.journal.issue | 8 | en_US |
mit.license | PUBLISHER_CC | |
mit.metadata.status | Authority Work and Publication Information Needed | en_US |