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dc.contributor.authorLee, Ethan S
dc.contributor.authorJoh, Jungwoo
dc.contributor.authorLee, Dong Seup
dc.contributor.authordel Alamo, Jesús A
dc.date.accessioned2022-09-19T12:24:49Z
dc.date.available2022-09-19T12:24:49Z
dc.date.issued2022
dc.identifier.urihttps://hdl.handle.net/1721.1/145471
dc.description.abstract<jats:p> In this Letter, we experimentally investigate the impact of gate geometry on forward operation of Schottky-gate p-GaN high electron mobility transistors (HEMTs). In particular, we analyze devices with changing gate-metal/p-GaN junction area and p-GaN/AlGaN/GaN heterostructure area in the linear regime. These devices exhibit unique threshold voltage and subthreshold swing scaling dependence with gate geometry that is in contrast with classic field-effect transistors. On the other hand, peak transconductance and ON resistance are found to scale classically. We find that these results arise from the fact that with a Schottky contact to the p-GaN layer, under steady-state conditions, the p-GaN layer voltage is set by current continuity across the gate stack. Furthermore, a detailed scaling study of the gate current reveals that current flow across the p-GaN/AlGaN/GaN heterostructure is not uniform—instead, it preferentially flows through the ungated portion of the p-GaN layer. Our study concludes that in Schottky-type p-GaN gate HEMTs, the respective areas of two junctions constitute an additional design degree of freedom to fine-tune device performance. </jats:p>en_US
dc.language.isoen
dc.publisherAIP Publishingen_US
dc.relation.isversionof10.1063/5.0084123en_US
dc.rightsCreative Commons Attribution 4.0 International licenseen_US
dc.rights.urihttps://creativecommons.org/licenses/by/4.0/en_US
dc.sourceAmerican Institute of Physics (AIP)en_US
dc.titleGate-geometry dependence of electrical characteristics of p-GaN gate HEMTsen_US
dc.typeArticleen_US
dc.identifier.citationLee, Ethan S, Joh, Jungwoo, Lee, Dong Seup and del Alamo, Jesús A. 2022. "Gate-geometry dependence of electrical characteristics of p-GaN gate HEMTs." Applied Physics Letters, 120 (8).
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.contributor.departmentMassachusetts Institute of Technology. Microsystems Technology Laboratoriesen_US
dc.relation.journalApplied Physics Lettersen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2022-09-19T12:13:57Z
dspace.orderedauthorsLee, ES; Joh, J; Lee, DS; del Alamo, JAen_US
dspace.date.submission2022-09-19T12:13:59Z
mit.journal.volume120en_US
mit.journal.issue8en_US
mit.licensePUBLISHER_CC
mit.metadata.statusAuthority Work and Publication Information Neededen_US


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