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dc.contributor.authorLogan, Julie V
dc.contributor.authorWebster, Preston T
dc.contributor.authorWoller, Kevin B
dc.contributor.authorMorath, Christian P
dc.contributor.authorShort, Michael P
dc.date.accessioned2023-01-20T18:54:55Z
dc.date.available2023-01-20T18:54:55Z
dc.date.issued2022-08-08
dc.identifier.urihttps://hdl.handle.net/1721.1/147619
dc.language.isoen
dc.publisherAmerican Physical Society (APS)en_US
dc.relation.isversionof10.1103/physrevmaterials.6.084601en_US
dc.rightsArticle is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use.en_US
dc.sourceAPSen_US
dc.titleUnderstanding the fundamental driver of semiconductor radiation tolerance with experiment and theoryen_US
dc.typeArticleen_US
dc.identifier.citationLogan, Julie V, Webster, Preston T, Woller, Kevin B, Morath, Christian P and Short, Michael P. 2022. "Understanding the fundamental driver of semiconductor radiation tolerance with experiment and theory." Physical Review Materials, 6 (8).
dc.contributor.departmentMassachusetts Institute of Technology. Department of Nuclear Science and Engineeringen_US
dc.relation.journalPhysical Review Materialsen_US
dc.eprint.versionFinal published versionen_US
dc.type.urihttp://purl.org/eprint/type/JournalArticleen_US
eprint.statushttp://purl.org/eprint/status/PeerRevieweden_US
dc.date.updated2023-01-20T18:43:00Z
dspace.orderedauthorsLogan, JV; Webster, PT; Woller, KB; Morath, CP; Short, MPen_US
dspace.date.submission2023-01-20T18:43:02Z
mit.journal.volume6en_US
mit.journal.issue8en_US
mit.licensePUBLISHER_POLICY
mit.metadata.statusAuthority Work and Publication Information Neededen_US


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