Electronegative metal dopants improve switching variability in Al2 O3 resistive switching devices

Author(s)
Tan, Zheng Jie; Somjit, Vrindaa; Toparli, Cigdem; Yildiz, Bilge; Fang, Nicholas
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Date issued
2022
URI
https://hdl.handle.net/1721.1/147710
Department
Massachusetts Institute of Technology. Department of Nuclear Science and Engineering
Journal
Physical Review Materials
Publisher
American Physical Society (APS)
Citation
Tan, Zheng Jie, Somjit, Vrindaa, Toparli, Cigdem, Yildiz, Bilge and Fang, Nicholas. 2022. "Electronegative metal dopants improve switching variability in Al2 O3 resistive switching devices." Physical Review Materials, 6 (10).
Version: Final published version
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