| dc.contributor.author | Tan, Zheng Jie | |
| dc.contributor.author | Somjit, Vrindaa | |
| dc.contributor.author | Toparli, Cigdem | |
| dc.contributor.author | Yildiz, Bilge | |
| dc.contributor.author | Fang, Nicholas | |
| dc.date.accessioned | 2023-01-25T18:22:54Z | |
| dc.date.available | 2023-01-25T18:22:54Z | |
| dc.date.issued | 2022 | |
| dc.identifier.uri | https://hdl.handle.net/1721.1/147710 | |
| dc.language.iso | en | |
| dc.publisher | American Physical Society (APS) | en_US |
| dc.relation.isversionof | 10.1103/PHYSREVMATERIALS.6.105002 | en_US |
| dc.rights | Article is made available in accordance with the publisher's policy and may be subject to US copyright law. Please refer to the publisher's site for terms of use. | en_US |
| dc.source | APS | en_US |
| dc.title | Electronegative metal dopants improve switching variability in Al2 O3 resistive switching devices | en_US |
| dc.type | Article | en_US |
| dc.identifier.citation | Tan, Zheng Jie, Somjit, Vrindaa, Toparli, Cigdem, Yildiz, Bilge and Fang, Nicholas. 2022. "Electronegative metal dopants improve switching variability in Al2 O3 resistive switching devices." Physical Review Materials, 6 (10). | |
| dc.contributor.department | Massachusetts Institute of Technology. Department of Nuclear Science and Engineering | en_US |
| dc.relation.journal | Physical Review Materials | en_US |
| dc.eprint.version | Final published version | en_US |
| dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
| eprint.status | http://purl.org/eprint/status/PeerReviewed | en_US |
| dc.date.updated | 2023-01-25T18:16:08Z | |
| dspace.orderedauthors | Tan, ZJ; Somjit, V; Toparli, C; Yildiz, B; Fang, N | en_US |
| dspace.date.submission | 2023-01-25T18:16:11Z | |
| mit.journal.volume | 6 | en_US |
| mit.journal.issue | 10 | en_US |
| mit.license | PUBLISHER_POLICY | |
| mit.metadata.status | Authority Work and Publication Information Needed | en_US |
