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dc.contributor.advisorDennis, Jack B.en_US
dc.contributor.authorBryant, Randal Everitten_US
dc.date.accessioned2023-03-29T15:05:24Z
dc.date.available2023-03-29T15:05:24Z
dc.date.issued1981-03
dc.identifier.urihttps://hdl.handle.net/1721.1/149539
dc.description.abstractSwitch-level simulators model a metal oxide semiconductor (MOS) large scale integrated (LSI) circuits as a network of transistor "switches". They can simulate many aspects of MOS circuits which cannot be expressed in the Boolean logic gate model, such as bidrecttional pass transistors, dynamic storage, and charge sharing.en_US
dc.relation.ispartofseriesMIT-LCS-TR-259
dc.titleA Switch-level Simulation Model for Integrated Logic Circuitsen_US
dc.identifier.oclc8017287


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