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dc.contributor.advisorWard, Stephen A.en_US
dc.contributor.authorTerman, Christopher J.en_US
dc.date.accessioned2023-03-29T15:09:47Z
dc.date.available2023-03-29T15:09:47Z
dc.date.issued1983-09
dc.identifier.urihttps://hdl.handle.net/1721.1/149580
dc.description.abstractThis thesis proposes a timing simulator (RSIM) based on a uniquely simple transistor model. RSIM allows a designer to determine both the functional and approximate timing characteristics of a MOS network with more accuracy than gate-level simulation, and using larger circuits than are accommodated by circuit analysis programs. In RSIM, transistors are modeled as resistors; the logic states of a transistor's terminal nodes determine its effective resistance.en_US
dc.relation.ispartofseriesMIT-LCS-TR-304
dc.titleSimulation Tools for Digital LSI Designen_US
dc.identifier.oclc10694541


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