GaN Memory Operational at 300 °C

Author(s)
Yuan, Mengyang; Xie, Qingyun; Niroula, John; Chowdhury, Nadim; Palacios, Tomas
Thumbnail
DownloadGaN_Memory_Operational_at_300C.pdf (5.252Mb)
Open Access Policy
Terms of use
Creative Commons Attribution-Noncommercial-Share Alike https://creativecommons.org/licenses/by-nc-sa/4.0/
Metadata
Show full item record
Date issued
2022-11-01
URI
https://hdl.handle.net/1721.1/150479
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Journal
IEEE Electron Device Letters
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Citation
Yuan, Mengyang, Xie, Qingyun, Niroula, John, Chowdhury, Nadim and Palacios, Tomas. 2022. "GaN Memory Operational at 300 °C." IEEE Electron Device Letters, 43 (12).
Version: Author's final manuscript
ISSN
0741-3106
1558-0563
Keywords
Electrical and Electronic Engineering, Electronic, Optical and Magnetic Materials
Collections