| dc.contributor.author | Yuan, Mengyang | |
| dc.contributor.author | Xie, Qingyun | |
| dc.contributor.author | Niroula, John | |
| dc.contributor.author | Chowdhury, Nadim | |
| dc.contributor.author | Palacios, Tomas | |
| dc.date.accessioned | 2023-04-10T15:12:53Z | |
| dc.date.available | 2023-04-10T15:12:53Z | |
| dc.date.issued | 2022-11-01 | |
| dc.identifier.issn | 0741-3106 | |
| dc.identifier.issn | 1558-0563 | |
| dc.identifier.uri | https://hdl.handle.net/1721.1/150479 | |
| dc.description.sponsorship | National Aeronautics and Space Administration (NASA) | en_US |
| dc.description.sponsorship | Lockheed Martin Corporation under Grant 025570-00036, Air Force Office of Scientific Research (AFOSR) under Grant FA9550-22-1-0367 | en_US |
| dc.publisher | Institute of Electrical and Electronics Engineers (IEEE) | en_US |
| dc.relation.isversionof | 10.1109/led.2022.3218671 | en_US |
| dc.rights | Creative Commons Attribution-Noncommercial-Share Alike | en_US |
| dc.rights.uri | https://creativecommons.org/licenses/by-nc-sa/4.0/ | en_US |
| dc.source | Yuan | en_US |
| dc.subject | Electrical and Electronic Engineering | en_US |
| dc.subject | Electronic, Optical and Magnetic Materials | en_US |
| dc.title | GaN Memory Operational at 300 °C | en_US |
| dc.type | Article | en_US |
| dc.identifier.citation | Yuan, Mengyang, Xie, Qingyun, Niroula, John, Chowdhury, Nadim and Palacios, Tomas. 2022. "GaN Memory Operational at 300 °C." IEEE Electron Device Letters, 43 (12). | |
| dc.contributor.department | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science | en_US |
| dc.relation.journal | IEEE Electron Device Letters | en_US |
| dc.eprint.version | Author's final manuscript | en_US |
| dc.type.uri | http://purl.org/eprint/type/JournalArticle | en_US |
| eprint.status | http://purl.org/eprint/status/PeerReviewed | en_US |
| dc.identifier.doi | 10.1109/LED.2022.3218671 | |
| dspace.date.submission | 2023-04-09T20:22:53Z | |
| mit.journal.volume | 43 | en_US |
| mit.journal.issue | 12 | en_US |
| mit.license | OPEN_ACCESS_POLICY | |
| mit.metadata.status | Authority Work and Publication Information Needed | en_US |
