High Temperature Robustness of Enhancement-Mode p-GaN-Gated AlGaN/GaN HEMT Technology

Author(s)
Yuan, Mengyang; Xie, Qingyun; Niroula, John; Isamotu, Mohamed Fadil; Rajput, Nitul S.; ... Show more
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Date issued
2022-11-07
URI
https://hdl.handle.net/1721.1/150480
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Journal
2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)
Publisher
IEEE
Citation
Yuan, Mengyang, Xie, Qingyun, Niroula, John, Isamotu, Mohamed Fadil, Rajput, Nitul S. et al. 2022. "High Temperature Robustness of Enhancement-Mode p-GaN-Gated AlGaN/GaN HEMT Technology." 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA).
Version: Author's final manuscript
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