dc.contributor.author | Yuan, Mengyang | |
dc.contributor.author | Xie, Qingyun | |
dc.contributor.author | Niroula, John | |
dc.contributor.author | Isamotu, Mohamed Fadil | |
dc.contributor.author | Rajput, Nitul S. | |
dc.contributor.author | Chowdhury, Nadim | |
dc.contributor.author | Palacios, Tomas | |
dc.date.accessioned | 2023-04-10T15:14:18Z | |
dc.date.available | 2023-04-10T15:14:18Z | |
dc.date.issued | 2022-11-07 | |
dc.identifier.uri | https://hdl.handle.net/1721.1/150480 | |
dc.description.sponsorship | National Aeronautics and Space Administration (NASA) | en_US |
dc.description.sponsorship | Lockheed Martin, Air Force Office of Scientific Research | en_US |
dc.publisher | IEEE | en_US |
dc.relation.isversionof | 10.1109/wipda56483.2022.9955304 | en_US |
dc.rights | Creative Commons Attribution-Noncommercial-Share Alike | en_US |
dc.rights.uri | https://creativecommons.org/licenses/by-nc-sa/4.0/ | en_US |
dc.source | Yuan | en_US |
dc.title | High Temperature Robustness of Enhancement-Mode p-GaN-Gated AlGaN/GaN HEMT Technology | en_US |
dc.type | Article | en_US |
dc.identifier.citation | Yuan, Mengyang, Xie, Qingyun, Niroula, John, Isamotu, Mohamed Fadil, Rajput, Nitul S. et al. 2022. "High Temperature Robustness of Enhancement-Mode p-GaN-Gated AlGaN/GaN HEMT Technology." 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA). | |
dc.contributor.department | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science | en_US |
dc.relation.journal | 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA) | en_US |
dc.eprint.version | Author's final manuscript | en_US |
dc.type.uri | http://purl.org/eprint/type/ConferencePaper | en_US |
eprint.status | http://purl.org/eprint/status/NonPeerReviewed | en_US |
dc.identifier.doi | 10.1109/WiPDA56483.2022.9955304 | |
dspace.date.submission | 2023-04-08T19:46:43Z | |
mit.license | OPEN_ACCESS_POLICY | |
mit.metadata.status | Authority Work and Publication Information Needed | en_US |