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dc.contributor.authorYuan, Mengyang
dc.contributor.authorXie, Qingyun
dc.contributor.authorNiroula, John
dc.contributor.authorIsamotu, Mohamed Fadil
dc.contributor.authorRajput, Nitul S.
dc.contributor.authorChowdhury, Nadim
dc.contributor.authorPalacios, Tomas
dc.date.accessioned2023-04-10T15:14:18Z
dc.date.available2023-04-10T15:14:18Z
dc.date.issued2022-11-07
dc.identifier.urihttps://hdl.handle.net/1721.1/150480
dc.description.sponsorshipNational Aeronautics and Space Administration (NASA)en_US
dc.description.sponsorshipLockheed Martin, Air Force Office of Scientific Researchen_US
dc.publisherIEEEen_US
dc.relation.isversionof10.1109/wipda56483.2022.9955304en_US
dc.rightsCreative Commons Attribution-Noncommercial-Share Alikeen_US
dc.rights.urihttps://creativecommons.org/licenses/by-nc-sa/4.0/en_US
dc.sourceYuanen_US
dc.titleHigh Temperature Robustness of Enhancement-Mode p-GaN-Gated AlGaN/GaN HEMT Technologyen_US
dc.typeArticleen_US
dc.identifier.citationYuan, Mengyang, Xie, Qingyun, Niroula, John, Isamotu, Mohamed Fadil, Rajput, Nitul S. et al. 2022. "High Temperature Robustness of Enhancement-Mode p-GaN-Gated AlGaN/GaN HEMT Technology." 2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA).
dc.contributor.departmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Scienceen_US
dc.relation.journal2022 IEEE 9th Workshop on Wide Bandgap Power Devices & Applications (WiPDA)en_US
dc.eprint.versionAuthor's final manuscripten_US
dc.type.urihttp://purl.org/eprint/type/ConferencePaperen_US
eprint.statushttp://purl.org/eprint/status/NonPeerRevieweden_US
dc.identifier.doi10.1109/WiPDA56483.2022.9955304
dspace.date.submission2023-04-08T19:46:43Z
mit.licenseOPEN_ACCESS_POLICY
mit.metadata.statusAuthority Work and Publication Information Neededen_US


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