Highly-Scaled Self-Aligned GaN Complementary Technology on a GaN-on-Si Platform

Author(s)
Xie, Qingyun; Yuan, Mengyang; Niroula, John; Greer, James A.; Rajput, Nitul S.; ... Show more
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Date issued
2022-12-03
URI
https://hdl.handle.net/1721.1/150552
Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science
Journal
2022 International Electron Devices Meeting (IEDM)
Publisher
IEEE
Citation
Xie, Qingyun, Yuan, Mengyang, Niroula, John, Greer, James A., Rajput, Nitul S. et al. 2022. "Highly-Scaled Self-Aligned GaN Complementary Technology on a GaN-on-Si Platform." 2022 International Electron Devices Meeting (IEDM).
Version: Author's final manuscript
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