| dc.contributor.author | Xie, Qingyun | |
| dc.contributor.author | Yuan, Mengyang | |
| dc.contributor.author | Niroula, John | |
| dc.contributor.author | Greer, James A. | |
| dc.contributor.author | Rajput, Nitul S. | |
| dc.contributor.author | Chowdhury, Nadim | |
| dc.contributor.author | Palacios, Tomas | |
| dc.date.accessioned | 2023-04-24T15:03:37Z | |
| dc.date.available | 2023-04-24T15:03:37Z | |
| dc.date.issued | 2022-12-03 | |
| dc.identifier.uri | https://hdl.handle.net/1721.1/150552 | |
| dc.description.sponsorship | Department of Energy (DOE) | en_US |
| dc.description.sponsorship | National Aeronautics and Space Administration (NASA) | en_US |
| dc.description.sponsorship | Intel Corp. | en_US |
| dc.publisher | IEEE | en_US |
| dc.relation.isversionof | 10.1109/iedm45625.2022.10019401 | en_US |
| dc.rights | Creative Commons Attribution-Noncommercial-Share Alike | en_US |
| dc.rights.uri | https://creativecommons.org/licenses/by-nc-sa/4.0/ | en_US |
| dc.source | Qingyun Xie | en_US |
| dc.title | Highly-Scaled Self-Aligned GaN Complementary Technology on a GaN-on-Si Platform | en_US |
| dc.type | Article | en_US |
| dc.identifier.citation | Xie, Qingyun, Yuan, Mengyang, Niroula, John, Greer, James A., Rajput, Nitul S. et al. 2022. "Highly-Scaled Self-Aligned GaN Complementary Technology on a GaN-on-Si Platform." 2022 International Electron Devices Meeting (IEDM). | |
| dc.contributor.department | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science | en_US |
| dc.relation.journal | 2022 International Electron Devices Meeting (IEDM) | en_US |
| dc.eprint.version | Author's final manuscript | en_US |
| dc.type.uri | http://purl.org/eprint/type/ConferencePaper | en_US |
| eprint.status | http://purl.org/eprint/status/NonPeerReviewed | en_US |
| dspace.date.submission | 2023-04-23T17:35:06Z | |
| mit.license | OPEN_ACCESS_POLICY | |
| mit.metadata.status | Authority Work and Publication Information Needed | en_US |
