GaN Field Emitter Arrays with JA of 10 A/cm<sup>2</sup> at V<sub>GE</sub> = 50 V for Power Applications
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III-Nitrides are attractive as field emission devices for high frequency, high power, and harsh environment applications. A wet-based digital etching and a novel device geometry was used to demonstrate GaN vertical self-alignedgate (SAG) field emitter arrays (FEA) with uniform tips of sub- 10 nm tip radius. The best GaN FEA has a current density (JA) of 10 A/cm2 at VGE = 50 V, which is better than the state-of-the-art Si field emitter arrays at the same bias condition.
Description
2022 International Electron Devices Meeting (IEDM), San Francisco, CA, USA
Date issued
2022-12-03Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer SciencePublisher
IEEE
Citation
P. . -C. Shih, T. Zheng, M. J. Arellano-Jimenez, B. Gnade, A. I. Akinwande and T. Palacios, "GaN Field Emitter Arrays with JA of 10 A/cm2 at VGE = 50 V for Power Applications," 2022 International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2022, pp. 9.6.1-9.6.4.
Version: Author's final manuscript