| dc.contributor.author | Shih, P.-C. | |
| dc.contributor.author | Zheng, T. | |
| dc.contributor.author | Arellano-Jimenez, M. J. | |
| dc.contributor.author | Gnade, B. | |
| dc.contributor.author | Akinwande, A. I. | |
| dc.contributor.author | Palacios, T. | |
| dc.date.accessioned | 2024-03-11T19:07:28Z | |
| dc.date.available | 2024-03-11T19:07:28Z | |
| dc.date.issued | 2022-12-03 | |
| dc.identifier.uri | https://hdl.handle.net/1721.1/153654 | |
| dc.description | 2022 International Electron Devices Meeting (IEDM), San Francisco, CA, USA | en_US |
| dc.description.abstract | III-Nitrides are attractive as field emission devices for high frequency, high power, and harsh environment applications. A wet-based digital etching and a novel device geometry was used to demonstrate GaN vertical self-alignedgate (SAG) field emitter arrays (FEA) with uniform tips of sub- 10 nm tip radius. The best GaN FEA has a current density (JA) of 10 A/cm2 at VGE = 50 V, which is better than the state-of-the-art Si field emitter arrays at the same bias condition. | en_US |
| dc.description.sponsorship | Department of Defense (DoD) | en_US |
| dc.publisher | IEEE | en_US |
| dc.relation.isversionof | 10.1109/iedm45625.2022.10019399 | en_US |
| dc.rights | Creative Commons Attribution-Noncommercial-ShareAlike | en_US |
| dc.rights.uri | http://creativecommons.org/licenses/by-nc-sa/4.0/ | en_US |
| dc.source | Author | en_US |
| dc.title | GaN Field Emitter Arrays with JA of 10 A/cm<sup>2</sup> at V<sub>GE</sub> = 50 V for Power Applications | en_US |
| dc.type | Article | en_US |
| dc.identifier.citation | P. . -C. Shih, T. Zheng, M. J. Arellano-Jimenez, B. Gnade, A. I. Akinwande and T. Palacios, "GaN Field Emitter Arrays with JA of 10 A/cm2 at VGE = 50 V for Power Applications," 2022 International Electron Devices Meeting (IEDM), San Francisco, CA, USA, 2022, pp. 9.6.1-9.6.4. | en_US |
| dc.contributor.department | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science | en_US |
| dc.eprint.version | Author's final manuscript | en_US |
| dc.type.uri | http://purl.org/eprint/type/ConferencePaper | en_US |
| eprint.status | http://purl.org/eprint/status/NonPeerReviewed | en_US |
| dc.identifier.doi | 10.1109/IEDM45625.2022.10019399 | |
| dspace.date.submission | 2024-03-09T02:15:48Z | |
| mit.license | PUBLISHER_CC | |
| mit.metadata.status | Authority Work and Publication Information Needed | en_US |
