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GaN Based Nanomaterials Fabrication with Anodic Aluminium Oxide by MOCVD
(2003-01)
A highly self-ordered hexagonal array of cylindrical pores has been fabricated by anodizing a thin film of Al on substrate and subsequent growth of GaN and InGaN in these nanoholes has been performed. This AAO template-based ...
Laser Fabrication by Using Photonic Crystal
(2003-01)
This paper involves the calculation for composition of different layer used in laser structure and the simulation of cavity, formed by creating air columns in the InGaAsP medium, for square lattice. The aim of this project ...
GaN Nanopore Arrays: Fabrication and Characterization
(2004-01)
GaN nanopore arrays with pore diameters of approximately 75 nm were fabricated by inductively coupled plasma etching (ICP) using anodic aluminum oxide (AAO) films as etch masks. Nanoporous AAO films were formed on the GaN ...
Structural analysis of metalorganic chemical vapor deposited AlN nucleation layers on Si (111)
(2004-01)
AlN nucleation layers are being investigated for growth of GaN on Si. The microstructures of high-temperature AlN nucleation layers grown by MOCVD on Si (111) substrates with trimethylaluminium pre-treatments have been ...
High Optical Quality Nanoporous GaN Prepared by Photoelectrochemical Etching
(2005-01)
Nanoporous GaN films are prepared by UV assisted electrochemical etching using HF solution as an electrolyte. To assess the optical quality and morphology of these nanoporous films, micro-photoluminescence (PL), micro-Raman ...
ZnO Nanorods Grown on p-GaN Using Hydrothermal Synthesis and Its Optoelectronic Devices Application
(2007-01)
The ZnO nanorods with the length of 1-1.5 μm
were deposited on p-GaN by hydrothermal synthesis at low temperature 100°C. The structural and optical properties of the as-grown ZnO rods were investigated by X-Ray
diffraction ...
Micro Raman Spectroscopy of Annealed Erbium Implanted GaN
(2004-01)
Wurtzite GaN epilayers grown by metal organic chemical vapor deposition on sapphire substrates were subsequently ion implanted with Er to a dose of 5×10¹⁵ cm⁻². The implanted samples were annealed in nitrogen atmosphere ...
Two-dimensional Photonic Crystals Fabricated by Nanoimprint Lithography
(2005-01)
We report on the process parameters of nanoimprint lithography (NIL) for the fabrication of two-dimensional (2-D) photonic crystals. The nickel mould with 2-D photonic crystal patterns covering the area up to 20mm² is ...
Fabrication and I-V Characterization of ZnO Nanorod Based Metal-Insulator-Semiconductor Junction
(2006-01)
We report on the characteristics of a ZnO based metal insulator semiconductor (MIS) diode comprised of a heterostructure of n-ZnO nanorods/n-GaN. The MIS structure consisted of unintentional - doped n type ZnO nanorods ...
Characterization of ZnO Nanorods Grown on GaN Using Aqueous Solution Method
(2005-01)
Uniformly distributed ZnO nanorods with diameter 70-100 nm and 1-2μm long have been successfully grown at low temperatures on GaN by using the inexpensive aqueous solution method. The formation of the ZnO nanorods and the ...