N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology
Author(s)
Chung, Jinwook; Piner, Edwin L.; Palacios, Tomas
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We present a new method to fabricate N-face GaN/AlGaN high electron mobility transistors (HEMTs). These devices are extremely promising for ultrahigh frequency applications where low contact resistances and excellent carrier confinement are needed. In this letter, the N-face of a Ga-face AlGaN/GaN epilayer grown on Si (111) is exposed by removing the Si substrate. To provide mechanical support, prior to the substrate removal, the Ga-face of the wafer is bonded to a Si (100) carrier wafer. The resultant N-face GaN/AlGaN heterostructures exhibited record transport properties (mu[subscript e] = 1670 cm[superscript 2]/Vmiddots, n[subscript s] = 1.6 times 10[superscript 13]/ cm[superscript 2], and R[subscript sh] = 240 Omega/sq). These excellent transport properties rendered N-face HEMTs with 30% higher maximum drain current than Ga-face HEMTs and good RF characteristics (f[subscript T] = 10.7 GHz middotmum and f[subscript max] = 21.5 GHzmiddotmum), comparable to state-of-the-art Ga-face devices.
Date issued
2009-01Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Microsystems Technology LaboratoriesJournal
IEEE Electron Device Letters
Publisher
Institute of Electrical and Electronics Engineers
Citation
Chung, J.W., E.L. Piner, and T. Palacios. “N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology.” Electron Device Letters, IEEE 30.2 (2009): 113-116. © 2009 Institute of Electrical and Electronics Engineers
Version: Final published version
Other identifiers
INSPEC Accession Number: 10467329
ISSN
0741-3106
Keywords
GaN, N-face GaN, high electron mobility transistor (HEMT), hydrogen silsesquioxane (HSQ) adhesive bonding, layer transfer, silicon substrate