dc.contributor.author | Chung, Jinwook | |
dc.contributor.author | Piner, Edwin L. | |
dc.contributor.author | Palacios, Tomas | |
dc.date.accessioned | 2010-03-18T19:45:10Z | |
dc.date.available | 2010-03-18T19:45:10Z | |
dc.date.issued | 2009-01 | |
dc.date.submitted | 2008-11 | |
dc.identifier.issn | 0741-3106 | |
dc.identifier.other | INSPEC Accession Number: 10467329 | |
dc.identifier.uri | http://hdl.handle.net/1721.1/52727 | |
dc.description.abstract | We present a new method to fabricate N-face GaN/AlGaN high electron mobility transistors (HEMTs). These devices are extremely promising for ultrahigh frequency applications where low contact resistances and excellent carrier confinement are needed. In this letter, the N-face of a Ga-face AlGaN/GaN epilayer grown on Si (111) is exposed by removing the Si substrate. To provide mechanical support, prior to the substrate removal, the Ga-face of the wafer is bonded to a Si (100) carrier wafer. The resultant N-face GaN/AlGaN heterostructures exhibited record transport properties (mu[subscript e] = 1670 cm[superscript 2]/Vmiddots, n[subscript s] = 1.6 times 10[superscript 13]/ cm[superscript 2], and R[subscript sh] = 240 Omega/sq). These excellent transport properties rendered N-face HEMTs with 30% higher maximum drain current than Ga-face HEMTs and good RF characteristics (f[subscript T] = 10.7 GHz middotmum and f[subscript max] = 21.5 GHzmiddotmum), comparable to state-of-the-art Ga-face devices. | en |
dc.description.sponsorship | United States. Office of Naval Research (MINE MURI Program) | en |
dc.language.iso | en_US | |
dc.publisher | Institute of Electrical and Electronics Engineers | en |
dc.relation.isversionof | http://dx.doi.org/10.1109/LED.2008.2010415 | en |
dc.rights | Article is made available in accordance with the publisher’s policy and may be subject to US copyright law. Please refer to the publisher’s site for terms of use. | en |
dc.source | IEEE | en |
dc.subject | GaN | en |
dc.subject | N-face GaN | en |
dc.subject | high electron mobility transistor (HEMT) | en |
dc.subject | hydrogen silsesquioxane (HSQ) adhesive bonding | en |
dc.subject | layer transfer | en |
dc.subject | silicon substrate | en |
dc.title | N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology | en |
dc.type | Article | en |
dc.identifier.citation | Chung, J.W., E.L. Piner, and T. Palacios. “N-Face GaN/AlGaN HEMTs Fabricated Through Layer Transfer Technology.” Electron Device Letters, IEEE 30.2 (2009): 113-116. © 2009 Institute of Electrical and Electronics Engineers | en |
dc.contributor.department | Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science | en_US |
dc.contributor.department | Massachusetts Institute of Technology. Microsystems Technology Laboratories | en_US |
dc.contributor.approver | Palacios, Tomas | |
dc.contributor.mitauthor | Chung, Jinwook | |
dc.contributor.mitauthor | Palacios, Tomas | |
dc.relation.journal | IEEE Electron Device Letters | en |
dc.eprint.version | Final published version | en |
dc.type.uri | http://purl.org/eprint/type/JournalArticle | en |
eprint.status | http://purl.org/eprint/status/PeerReviewed | en |
dspace.orderedauthors | Chung, J.W.; Piner, E.L.; Palacios, T. | en |
dc.identifier.orcid | https://orcid.org/0000-0002-2190-563X | |
mit.license | PUBLISHER_POLICY | en |
mit.metadata.status | Complete | |