On-wafer seamless integration of GaN and Si (100) electronics
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The high thermal stability of nitride semiconductors allows for the on-wafer integration of (001)Si CMOS electronics and electronic devices based on these semiconductors. This paper describes the technology developed at MIT to seamlessly integrate GaN and Si transistors in very close proximity (<5 mum). This integration, the first of any III-V field effect transistor with (001) Si electronics, enables tremendous new possibilities to circuit and system designers. For example, we will study the use of hybrid GaN-Si circuits to improve the power distribution networks in Si microprocessors.
Date issued
2009-11Department
Massachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Microsystems Technology LaboratoriesJournal
Annual IEEE Compound Semiconductor Integrated Circuit Symposium, 2009. CISC 2009.
Publisher
Institute of Electrical and Electronics Engineers
Citation
Jin Wook Chung, Bin Lu, and T. Palacios. “On-Wafer Seamless Integration of GaN and Si (100) Electronics.” Compound Semiconductor Integrated Circuit Symposium, 2009. CISC 2009. Annual IEEE. 2009. 1-4. ©2009 Institute of Electrical and Electronics Engineers.
Version: Final published version
Other identifiers
INSPEC Accession Number: 10964147
ISBN
978-1-4244-5191-3
ISSN
1550-8781