On-wafer seamless integration of GaN and Si (100) electronics
Author(s)Chung, Jinwook; Lu, Bin; Palacios, Tomas
MetadataShow full item record
The high thermal stability of nitride semiconductors allows for the on-wafer integration of (001)Si CMOS electronics and electronic devices based on these semiconductors. This paper describes the technology developed at MIT to seamlessly integrate GaN and Si transistors in very close proximity (<5 mum). This integration, the first of any III-V field effect transistor with (001) Si electronics, enables tremendous new possibilities to circuit and system designers. For example, we will study the use of hybrid GaN-Si circuits to improve the power distribution networks in Si microprocessors.
DepartmentMassachusetts Institute of Technology. Department of Electrical Engineering and Computer Science; Massachusetts Institute of Technology. Microsystems Technology Laboratories
Annual IEEE Compound Semiconductor Integrated Circuit Symposium, 2009. CISC 2009.
Institute of Electrical and Electronics Engineers
Jin Wook Chung, Bin Lu, and T. Palacios. “On-Wafer Seamless Integration of GaN and Si (100) Electronics.” Compound Semiconductor Integrated Circuit Symposium, 2009. CISC 2009. Annual IEEE. 2009. 1-4. ©2009 Institute of Electrical and Electronics Engineers.
Final published version
INSPEC Accession Number: 10964147