Channel engineering of SOI MOSFETs for RF applications

Author(s)
Keast, Craig L.; Wyatt, Peter W.; Healey, Paul D.; Yost, Donna-Ruth W.; Gouker, Pascale M.; ... Show more
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Abstract
Channel engineering of SOI MOSFETs is explored by altering ion implantation without adding any new fabrication steps to the standard CMOS process. The effects of implantation on characteristics important for RF applications, such as transconductance, output resistance, breakdown voltage, are compared. Data show that the best overall RF MOSFET has no body and drain-extension implants.
Date issued
2009-10
URI
http://hdl.handle.net/1721.1/53745
Department
Lincoln Laboratory
Journal
2009 IEEE International SOI Conference
Publisher
Institute of Electrical and Electronics Engineers
Citation
Chen, C.L. et al. “Channel engineering of SOI MOSFETs for RF applications.” SOI Conference, 2009 IEEE International. 2009. 1-2. © 2009 IEEE
Version: Final published version
ISBN
978-1-4244-4256-0
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